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The Properties And Application of Gallium nitride

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What is Gallium Nitride (Galium Nitride)?
Inorganic gallium nitride has the chemical formula GaN. It is made up of gallium, nitrogen, and a combination. It is a direct-bandgap semiconductor that has been widely used in light emitting diodes (LEDs) since 1990. The compound’s structure is similar to that of wurtzite and has high hardness. Gallium Nitride has an energy gap of about 3.4 electron-volts. This can be useful in high-speed and high-power optoelectronic devices. Gallium nitride is used, for instance, in violet lasers. You can use it without nonlinear semi-conductor pumped solid state lasers.

In 2014, Yuki Akasaki, professor at Nagoya University in Japan as well as Hiroshi Amao, professor of Nagoya University in Japan won the Nobel Prize in Physics. Shuji Nakamura, a professor of University of California Santa Barbara, also received the prize.
Applications of GaN

GaN series has low heat production rate and high electric breakdown field. They are important materials for developing high-temperature and high power electronic devices, as well high-frequency microwave devices.

GaN materials are ideal for light-emitting devices with short wavelengths. GaN, and its alloys, cover the spectrum from red through to ultraviolet.

GaN is the most recent and exciting frontier in semiconductor research. This is a new semiconductor material used for microelectronics and optoelectronics. Along with semiconductor materials, such as SIC or diamond, it’s known as the next generation of Ge and Si.

Semiconductor material, second-generation GaAs compound semiconductor material, and third-generation semiconductor material. It has a wide bandgap and a strong atomic structure. It also has high thermal conductivity (nearly uncorroded by acid) as well as good radiation resistance. It’s used in photoelectronics and devices with high temperatures and power.

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