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When boron is introduced into crystalline silicon it creates a p-type doping material. Other elements such as phosphorus, arsenic and antimony are also used to dope silicon wafers.
During the doping process, the boron atoms in the semiconductor form a dopant site bonding energy of 0.045 eV, which is close to the band gap of the silicon crystal and allows boron dopants to diffuse at an easy-to-control rate. This is an important property for boron doped silicon wafers because it makes it possible to control the depth of junctions and thus increase the performance of integrated circuits.
Heavily Doped Silicon Wafer
In some applications, it is necessary to use a highly doped silicon wafer to resist electrons. This is done by introducing high concentrations of boron dopants.
This type of doped silicon wafer is also known as Heavily Doped Silicon (HDW). HDWs have a boron dopant concentration of 1×1019 atoms/cm3 and are used in the electronics industry to resist the emission of electrons.
Boron doped silicon is also available in the form of thin films. These can be grown on Si/SiO2, sapphire (Al2O3), glass/ITO/TiO2, and Ni-W substrates using a HWCVD technique. The film is then etched with a plasma-thermal vaporization system to achieve a hard boron-doped silicon layer. The boron doped film is then used in various electronic devices such as photovoltaic cells and modules. It can be produced in thin or thick thicknesses according to the needs of the application.