If you are looking for high-quality products, please feel free to contact us and send an inquiry, email: brad@ihpa.net
tantalum boride is an ultra-incompressible and hard material with high thermal conductivity and electrical conductivity. It is widely used in chemical industry, metallurgy, building materials, national defense and military industry, and agriculture.
Microwave plasma chemical vapor deposition (MPCVD) was used to deposit tantalum boride on a quartz substrate under microwave exposure and gas flow ratios of TaCl5-BCl3-H2-Ar at temperatures ranging from 540-800 degC for 1 hour in the presence of diborane. The influence of the substrate temperature and substrate bias on the surface chemical structure and hardness of the deposited tantalum boron boride was investigated.
X-ray diffraction analysis revealed that boron-induced lattice strain, which results from the presence of a small amount of TaB2, can be responsible for the 40 GPa average hardness measured by nanoindentation. This can be explained by the formation of a solid solution within the tantalum and subsequent precipitation of TaB and TaB2 from the body-centered cubic lattice.
DOS calculations showed that the partial density of states (DOS) in m-TaB4 were much higher than those in ReB2 and OsB4, which suggest that m-TaB4 is metallic and the covalent bonding between the p electrons of boron and the d electrons of tantalum is stronger. This enables the formation of a planar six-membered ring unit in the m-TaB4 crystal, which makes m-TaB4 form three-dimensional structures, thus enhancing its mechanical properties.
The oxidation behavior of TaB2 powder at 1273 K for 5 minutes to 25 hours was investigated in order to determine the possibility of using advanced high temperature structural materials. The weight gain of the samples oxidized at 873 K for 5 minutes to 1273 K was estimated by measuring the change in weight, and the results indicated that the maximum weight gain value occurred at 973 to 1073 K, and the weight gain increased with increasing oxidation temperature.