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Bismuth Oxide Melting Point

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Abstract

Bismuth oxide is a versatile and highly stable material for a wide range of applications. It is used in a variety of electronic devices, such as supercapacitors, because of its high scp (superconductivity per unit volume) and cyclic stability.

During the deposition process of bismuth oxide thin films on glass substrates, it is important to control the substrate temperature as a crucial parameter. In this paper, the influence of the substrate temperature on the morphology and the structural, compositional and optical properties of these thin films was studied.

A bismuth target was deposited using pulsed laser deposition in a reactive oxygen plasma on cost-efficient BK7 glass substrates at four temperatures varied between 300 degC and 600 degC. The resulting thin films have been characterized by the atomic force microscope, demonstrating uniform grains on the surface of the film at the lowest substrate temperature, while they are sharper at the higher one.

The energy bandgaps of the films vary between 0.743 and 3.312 eV, changing with the increasing substrate temperature during the deposition. These multiple values are related to the complex composition and structure of the bismuth oxide thin films, which could be sensitive to the electromagnetic radiation from a large spectral range, such as in optoelectronic applications.